| PART |
Description |
Maker |
| SI4804BDY |
5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| SI4431BDY-T1 |
5700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| SI4431BDY-T1-GE3 |
5700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| 5962-9073601HXC |
OP-AMP, 5700 uV OFFSET-MAX, MBFM8
|
APEX MICROTECHNOLOGY CORP
|
| DRD1070477B60Z00T DRD1270563B00B00T DRD1270563B60A |
DISC TYPE DIELECTRIC RESONATOR, 5700 MHz - 6210 MHz
DISC TYPE DIELECTRIC RESONATOR, 4830 MHz - 5250 MHz
DISC TYPE DIELECTRIC RESONATOR, 5250 MHz - 5700 MHz
DISC TYPE DIELECTRIC RESONATOR, 7330 MHz - 7970 MHz
|
MURATA MANUFACTURING CO LTD
|
| DRD127BM056A DRD026BF012B MURATAMANUFACTURINGCOLTD |
DISC TYPE DIELECTRIC RESONATOR, 4830 MHz - 5250 MHz
DISC TYPE DIELECTRIC RESONATOR, 23670 MHz - 25940 MHz
DISC TYPE DIELECTRIC RESONATOR, 20030 MHz - 21750 MHz
DISC TYPE DIELECTRIC RESONATOR, 18400 MHz - 20030 MHz
CYLINDRICAL TYPE DIELECTRIC RESONATOR, 9550 MHz - 10420 MHz
DISC TYPE DIELECTRIC RESONATOR, 5700 MHz - 6210 MHz
DISC TYPE DIELECTRIC RESONATOR, 5250 MHz - 5700 MHz
|
MURATA MANUFACTURING CO LTD
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| MUX28 MUX-16AT MUX28AT/883 |
8-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP28
16-Channel/Dual 8-Channel JFET Analog Multiplexers(Overvoltage Protected)
|
ANALOG DEVICES INC
AD[Analog Devices]
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| DMN5L06V-7 DMN5L06VA-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
|
|
